Kingston Technology ValueRAM KVR32N22S6/4 memory module 4 GB 1 x 4 GB DDR4 3200 MHz1

Kingston Technology ValueRAM KVR32N22S6/4 memory module 4 GB 1 x 4 GB DDR4 3200 MHz

Kingston Technology ValueRAM KVR32N22S6/4. Component for: PC/server, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 288-pin DIMM, CAS latency: 22

Manufacturer: Kingston Technology

SKU: 5596258

Manufacturer part number: KVR32N22S6/4

GTIN: 0740617296075

ValueRAM's KVR32N22S6/4 is a 512M x 64-bit (4GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.

Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
Low-power auto self refresh (LPASR)
Data bus inversion (DBI) for data bus
On-die VREFDQ generation and calibration
Single-rank
On-board I2 serial presence-detect (SPD) EEPROM
8 internal banks; 2 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Fly-by topology
Terminated control command and address bus
RoHS Compliant and Halogen-Free

Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
Low-power auto self refresh (LPASR)
Data bus inversion (DBI) for data bus
On-die VREFDQ generation and calibration
Single-rank
On-board I2 serial presence-detect (SPD) EEPROM
8 internal banks; 2 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Fly-by topology
Terminated control command and address bus
RoHS Compliant and Halogen-Free

Products specifications

Attribute name	Attribute value
Country of Origin	Taiwan
Width	5.25"
Height	1.23"
JEDEC standard	Y
Lead plating	Gold
Doesn't contain	Halogen
Harmonized System (HS) code	84733020
Row cycle time	45.75 ns
Refresh row cycle time	350 ns
Row active time	32 ns
Programming power voltage (VPP)	2.5 V
Technical details
Sustainability certificates	RoHS
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Features
Internal memory	4 GB
Internal memory type	DDR4
Memory clock speed	3200 MHz
Component for	PC/server
Memory form factor	288-pin DIMM
ECC	N
Buffered memory type	Unregistered (unbuffered)
CAS latency	22
Memory voltage	1.2 V
Memory layout (modules x size)	1 x 4 GB
Memory ranking	1
Module configuration	512M x 64

Product tags

(82310)