Kingston Technology ValueRAM KVR26S19S6/4 memory module 4 GB 1 x 4 GB DDR4 2666 MHz1

Kingston Technology ValueRAM KVR26S19S6/4 memory module 4 GB 1 x 4 GB DDR4 2666 MHz

Kingston Technology ValueRAM KVR26S19S6/4. Component for: Laptop, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19

Manufacturer: Kingston Technology

SKU: 5216075

Manufacturer part number: KVR26S19S6/4

GTIN: 0740617280647

This document describes ValueRAM's KVR26S19S6/4 as a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin SODIMM uses gold contact fingers.

Power Supply: VDD = 1.2V Typical
VDDQ = 1.2V Typical
VPP = 2.5V Typical
VDDSPD = 2.2V to 3.6V
Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
Low-power auto self refresh (LPASR)
Data bus inversion (DBI) for data bus
On-die VREFDQ generation and calibration
Single-rank
On-board I2 serial presence-detect (SPD) EEPROM
8 internal banks; 2 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Fly-by topology
Terminated control command and address bus
PCB: Height 1.18” (30.00mm)

Power Supply: VDD = 1.2V Typical
VDDQ = 1.2V Typical
VPP = 2.5V Typical
VDDSPD = 2.2V to 3.6V
Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
Low-power auto self refresh (LPASR)
Data bus inversion (DBI) for data bus
On-die VREFDQ generation and calibration
Single-rank
On-board I2 serial presence-detect (SPD) EEPROM
8 internal banks; 2 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Fly-by topology
Terminated control command and address bus
PCB: Height 1.18” (30.00mm)

Products specifications

Attribute name	Attribute value
Depth	0.0965"
Width	2.74"
Height	1.18"
Doesn't contain	Halogen
Row cycle time	45.75 ns
Refresh row cycle time	350 ns
Row active time	32 ns
Programming power voltage (VPP)	2.5 V
Country of Origin	Taiwan
Harmonized System (HS) code	84733020
Compliance certificates	RoHS
Technical details
Sustainability certificates	RoHS
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Features
Internal memory	4 GB
Internal memory type	DDR4
Memory clock speed	2666 MHz
Memory form factor	260-pin SO-DIMM
Buffered memory type	Unregistered (unbuffered)
CAS latency	19
Memory voltage	1.2 V
Memory layout (modules x size)	1 x 4 GB
Memory ranking	1
Component for	Laptop
ECC	No

Product tags

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