Kingston Technology ValueRAM KVR26S19D8/16 memory module 16 GB 1 x 16 GB DDR4 2666 MHz1

Kingston Technology ValueRAM KVR26S19D8/16 memory module 16 GB 1 x 16 GB DDR4 2666 MHz

Kingston Technology ValueRAM KVR26S19D8/16. Component for: Notebook, Internal memory: 16 GB, Memory layout (modules x size): 1 x 16 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19

Manufacturer: Kingston Technology

SKU: 5216074

Manufacturer part number: KVR26S19D8/16

GTIN: 0740617280623

This document describes ValueRAM's KVR26S19D8/16 is a 2G x 64-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 2Rx8, non-ECC, memory module, based on sixteen 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingers.

Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
Low-power auto self refresh (LPASR)
Data bus inversion (DBI) for data bus
On-die VREFDQ generation and calibration
Dual-rank
On-board I2 serial presence-detect (SPD) EEPROM
16 internal banks; 4 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Fly-by topology
Terminated control command and address bus
RoHS Compliant and Halogen-Fre

Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
Low-power auto self refresh (LPASR)
Data bus inversion (DBI) for data bus
On-die VREFDQ generation and calibration
Dual-rank
On-board I2 serial presence-detect (SPD) EEPROM
16 internal banks; 4 groups of 4 banks each
Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Fly-by topology
Terminated control command and address bus
RoHS Compliant and Halogen-Fre

Products specifications

Attribute name	Attribute value
Width	2.74"
Depth	0.146"
Height	1.18"
JEDEC standard	Y
Lead plating	Gold
Doesn't contain	Halogen
Row cycle time	45.75 ns
Refresh row cycle time	350 ns
Row active time	32 ns
Programming power voltage (VPP)	2.5 V
Technical details
Sustainability certificates	RoHS
Design
Certification	UL 94 V-0
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Features
Internal memory	16 GB
Internal memory type	DDR4
Memory clock speed	2666 MHz
Component for	Notebook
Memory form factor	260-pin SO-DIMM
CAS latency	19
Memory voltage	1.2 V
Memory layout (modules x size)	1 x 16 GB
Memory ranking	2
Linux operating systems supported	Y
Module configuration	2048M x 64
System requirements
Windows operating systems supported	Y
Mac operating systems supported	Y

Product tags

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