Kingston Technology KSM26RS8/8HDI memory module 8 GB 1 x 8 GB DDR4 2666 MHz ECC

Kingston Technology KSM26RS8/8HDI. Component for: PC/server, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 288-pin DIMM, CAS latency: 19, ECC
Manufacturer: Kingston Technology
SKU: 5866346
Manufacturer part number: KSM26RS8/8HDI
GTIN: 0740617308204
Kingston's KSM26RS8/8HDI is a 1G x 72-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers.

 

  • Functionality and operations comply with the DDR4 SDRAM datasheet
  • 16 internal banks
  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported
Kingston's KSM26RS8/8HDI is a 1G x 72-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers.

 

  • Functionality and operations comply with the DDR4 SDRAM datasheet
  • 16 internal banks
  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported
Products specifications
Attribute nameAttribute value
Row cycle time46.25 ns
Country of OriginTaiwan
JEDEC standardY
Lead platingGold
Harmonized System (HS) code84733020
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Technical details
Sustainability certificatesRoHS
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Features
Internal memory8 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forPC/server
Memory form factor288-pin DIMM
ECCY
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)1 x 8 GB
Module configuration1024M x 72
Product tags
  • (50948)