Axiom D4NESO-2666-4G-AX memory module 4 GB 1 x 4 GB DDR4 2666 MHz

Axiom D4NESO-2666-4G-AX. Component for: Notebook, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19
Manufacturer: Axiom
SKU: 6065070
Manufacturer part number: D4NESO-2666-4G-AX
Axiom's DDR4 Modules use the latest evolutionary DRAM design, provides improved speed, power management and reliability. The release of DDR4 delivers an overall performance improvement of up to 30% for single DIMM configurations. DDR4 performance scales up to 65% faster in 3-DIMM per channel (3DPC) applications over DDR3. High bandwidth and faster data rates combined with lower voltage demands deliver the most compelling and significant DRAM computing update in the past decade.

 

  • 100% Increase in speed - Faster Data Rate equates to more responsive application loads on data-intensive programs
  • 300% increase in component densities – Equals larger modules for next-generation performance demands
  • 20% decrease in power consumption – Less power consumed means less wasted resources to cool systems and reserves battery program for mobile devices
  • Provides greater reliability, availability and serviceability (RAS) in enterprise applications – Complete integrity and fault tolerance for longer periods without system failure
  • Improved data signal
Axiom's DDR4 Modules use the latest evolutionary DRAM design, provides improved speed, power management and reliability. The release of DDR4 delivers an overall performance improvement of up to 30% for single DIMM configurations. DDR4 performance scales up to 65% faster in 3-DIMM per channel (3DPC) applications over DDR3. High bandwidth and faster data rates combined with lower voltage demands deliver the most compelling and significant DRAM computing update in the past decade.

 

  • 100% Increase in speed - Faster Data Rate equates to more responsive application loads on data-intensive programs
  • 300% increase in component densities – Equals larger modules for next-generation performance demands
  • 20% decrease in power consumption – Less power consumed means less wasted resources to cool systems and reserves battery program for mobile devices
  • Provides greater reliability, availability and serviceability (RAS) in enterprise applications – Complete integrity and fault tolerance for longer periods without system failure
  • Improved data signal
Products specifications
Attribute nameAttribute value
Technical details
Sustainability certificatesRoHS
Features
Internal memory4 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Component forNotebook
Memory form factor260-pin SO-DIMM
CAS latency19
Memory voltage1.2 V
Memory layout (modules x size)1 x 4 GB
Module configuration512M x 16
Product tags
  • (82310)